The appearance of clear ferromagnetism for p-type InMnP:Zn implanted with Mn of 1 at.%

Materials Science and Engineering: B

Volumn 146, Issue 1-3, 2008, Pages 220-224

  Shon, Yoon ^a   Jeon, H C ^a   Lee, Sejoon ^a   Park, C S ^a   Kim, Eun Kyu ^b   Fu, D J ^c   Fan, X J ^c   Yoon, Chong S ^b   Lee, Jeoung Ju ^d  

^a Dongguk University   (South Korea)

^b Hanyang University   (South Korea)

^c WUHAN UNIVERSITY   (China)

^d Gyeongsang National University   (South Korea)

Author keywords

Ferromagnetic semiconductor; InMnP:Zn; Mn+ ion implantation

Indexed keywords

CONCENTRATION (PROCESS); CRYSTAL GROWTH FROM MELT; ENERGY DISPERSIVE SPECTROSCOPY; ION IMPLANTATION; OPTICAL TRANSITIONS; SEMICONDUCTING INDIUM COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY;

FERROMAGNETIC BEHAVIOR; MN-INCORPORATED LAYER; ROOM-TEMPERATURE;

FERROMAGNETISM;

EID: 37349044587     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2007.07.093     Document Type: Article

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