Electroforming and switching effects in yttrium oxide

Physica Status Solidi (A) Applied Research

Volumn 201, Issue 7, 2004, Pages 1543-1550

  Pergament, A L ^a   Malinenko, V P ^a   Tulubaeva, O I ^a   Aleshina, L A ^a  

^a PETROZAVODSK STATE UNIVERSITY   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; DYNAMIC RANDOM ACCESS STORAGE; ELECTRIC RESISTANCE; ELECTROFORMING; INDUCTANCE; METAL INSULATOR TRANSITION; SANDWICH STRUCTURES; SWITCHING;

CURRENT CONTROLLED NEGATIVE RESISTANCE (CCNR); MEMORY SWITCHING; NEGATIVE DIFFERENTIAL RESISTANCES (NDR);

YTTRIUM COMPOUNDS;

EID: 3042553223     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssa.200306804     Document Type: Article

References (37)

1. S. R. Ovshinsky, Phys. Rev. Lett. 21, 1450 (1968). D. Adler, H. K. Henisch, and N. F. Mott, Rev. Mod. Phys. 50, 208 (1978). D. Adler, M. S. Shur, M. Silver, and S. R. Ovshinsky, J. Appl. Phys. 51, 3289 (1980).
2. S. R. Ovshinsky, Phys. Rev. Lett. 21, 1450 (1968). D. Adler, H. K. Henisch, and N. F. Mott, Rev. Mod. Phys. 50, 208 (1978). D. Adler, M. S. Shur, M. Silver, and S. R. Ovshinsky, J. Appl. Phys. 51, 3289 (1980).
3. S. R. Ovshinsky, Phys. Rev. Lett. 21, 1450 (1968). D. Adler, H. K. Henisch, and N. F. Mott, Rev. Mod. Phys. 50, 208 (1978). D. Adler, M. S. Shur, M. Silver, and S. R. Ovshinsky, J. Appl. Phys. 51, 3289 (1980).
4. A. Madan and M. P. Shaw, The Physics and Applications of Amorphous Semiconductors (Academic Press, New York, 1988).
5. A. E. Owen, P. G. Le Comber, J. Hajto, M. J. Rose, and A. J. Snell, Int. J. Electronics 73, 897 (1992).
6. F. A. Chudnovskii, L. L. Odynets, A. L. Pergament, and G. B. Stefanovich, J. Solid State Chem. 122, 95 (1996).
7. F. A. Chudnovskii, A. L. Pergament, G. B. Stefanovich, P. A. Metcalf, and J. M. Honig, J. Appl. Phys. 84, 2643 (1998).
8. H. Pagnia and N. Sotnik, phys. stat. sol. (a) 108, 11 (1988).
9. A. K. Ray and C. A. Hogarth, Int. J. Electronics 57, 1 (1984).
10. J. F. Scott, Integrated Ferroelectrics 19, 85 (1998). K. Watanabe, A. J. Hartmann, R. N. Lamb, and J. F. Scott, J. Appl. Phys. 84, 2170 (1998). J. F. Scott, Ferroelectric Memories (Springer, Berlin, 2000).
11. J. F. Scott, Integrated Ferroelectrics 19, 85 (1998). K. Watanabe, A. J. Hartmann, R. N. Lamb, and J. F. Scott, J. Appl. Phys. 84, 2170 (1998). J. F. Scott, Ferroelectric Memories (Springer, Berlin, 2000).
12. J. F. Scott, Integrated Ferroelectrics 19, 85 (1998). K. Watanabe, A. J. Hartmann, R. N. Lamb, and J. F. Scott, J. Appl. Phys. 84, 2170 (1998). J. F. Scott, Ferroelectric Memories (Springer, Berlin, 2000).
13. nd edn. (Taylor and Francis, London, 1990).
14. F. A. Chudnovskii, Sov. Phys. Tech. Phys. 20, 999 (1976).
15. A. Beck, J. G. Bednorz, C. Gerber, C. Rossel, and D. Widmer, Appl. Phys. Lett. 77, 139 (2000).
16. F. A. Chudnovskii, A. L. Pergament, G. B. Stefanovich, P. Somasundaram, and J. M. Honig, phys. stat. sol. (a) 161, 577 (1997). F. A. Chudnovskii, A. L. Pergament, P. Somasundaram, and J. M. Honig, phys. stat. sol. (a) 172, 131 (1999).
17. F. A. Chudnovskii, A. L. Pergament, G. B. Stefanovich, P. Somasundaram, and J. M. Honig, phys. stat. sol. (a) 161, 577 (1997). F. A. Chudnovskii, A. L. Pergament, P. Somasundaram, and J. M. Honig, phys. stat. sol. (a) 172, 131 (1999).
18. J. N. Huiberts, R. Griessen, J. H. Rector, R. J. Wijngaarden, J. P. Dekker, D. G. de Groot, and N. J. Koeman, Nature 380, 231 (1996). A. Remhof, G. Song, D. Labergerie, J. Isidorsson, A. Schreyer, F. Guthoff, J. Hartwig, and H. Zabel, J. Alloys Compd. 330-332, 276 (2002).
19. J. N. Huiberts, R. Griessen, J. H. Rector, R. J. Wijngaarden, J. P. Dekker, D. G. de Groot, and N. J. Koeman, Nature 380, 231 (1996). A. Remhof, G. Song, D. Labergerie, J. Isidorsson, A. Schreyer, F. Guthoff, J. Hartwig, and H. Zabel, J. Alloys Compd. 330-332, 276 (2002).
20. R. J. Gaboriaud, F. Pailloux, P. Guerin, and F. Paumier, J. Phys. D: Appl. Phys. 33, 2884 (2000).
21. R. H. Horng, D. S. Wuu, J. W. Yu, and C. Y. Kung, Thin Solid Films 289, 234 (1996).
22. S. Zhang and R. Xiao, J. Appl. Phys. 83, 3842 (1998).
23. D. Basak and S. K. Sen, Thin Solid Films 254, 181 (1995).
24. D.-G. Lim, D.-J. Kwak, and J. Yi, Thin Solid Films 422, 150 (2002).
25. T. Tsutsumi, Japan. J. Appl. Phys. 9, 735 (1970).
26. S. Kuriki, A. Noya, and G. Matsumoto, Thin Solid Films 48, 27 (1978).
27. V. P. Malinenko, E. Yu. Glazko, and G. B. Stefanovich, Elektrokhimiya (Russian J. Electrochem.) 36, 1089 (2000).
28. L. A. Aleshina and S. V. Loginova, Crystallography Reports 48, 531 (2003).
29. A. L. Pergament, G. B. Stefanovich, and F. A. Chudnovskii, Phys. Solid State 36, 1590 (1994).
30. R. J. Ackermann and E. G. Rauh, J. Chem. Thermodyn. 5, 331 (1973).
31. A. L. Pergament, G. B. Stefanovich, and F. A. Chudnovskii, Tech. Phys. Lett. 19, 663 (1993). G. Stefanovich, A. Pergament, and D. Stefanovich, J. Phys.: Condens. Matter 12, 8837 (2000). P. P. Boriskov, A. A. Velichko, A. L. Pergament, G. B. Stefanovich, and D. G. Stefanovich, Tech. Phys. Lett. 28, 406 (2002).
32. A. L. Pergament, G. B. Stefanovich, and F. A. Chudnovskii, Tech. Phys. Lett. 19, 663 (1993). G. Stefanovich, A. Pergament, and D. Stefanovich, J. Phys.: Condens. Matter 12, 8837 (2000). P. P. Boriskov, A. A. Velichko, A. L. Pergament, G. B. Stefanovich, and D. G. Stefanovich, Tech. Phys. Lett. 28, 406 (2002).
33. A. L. Pergament, G. B. Stefanovich, and F. A. Chudnovskii, Tech. Phys. Lett. 19, 663 (1993). G. Stefanovich, A. Pergament, and D. Stefanovich, J. Phys.: Condens. Matter 12, 8837 (2000). P. P. Boriskov, A. A. Velichko, A. L. Pergament, G. B. Stefanovich, and D. G. Stefanovich, Tech. Phys. Lett. 28, 406 (2002).
34. E. A. Lebedev and K. D. Tsendin, Semiconductors 32, 838 (1998).
35. E. L. Nagaev, Phys. Solid State 40, 351 (1998).
36. P. Poddar and A. K. Rastogi, phys. stat. sol. (b) 218, 229 (2000).
37. F. Ladieu, M. Sanquer, and J. P. Bouchaud, Phys. Rev. B 53, 973 (1996).