Scaling of chlorosilane SiC CVD to multi-wafer epitaxy system

Materials Science Forum

Volumn 556-557, Issue , 2007, Pages 145-148

  Wan, J ^a   Loboda, M J ^a   MacMillan, M F ^a   Chung, G ^a   Carlson, E P ^a   Torres, V M ^a  

^a DOW CORNING CORPORATION   (United States)

Author keywords

Chlorosilane; Epitaxy; SiC

Indexed keywords

BENCHMARKING; CARRIER LIFETIME; EPITAXIAL GROWTH; SILICON CARBIDE;

CHLOROSILANES; EPITAXIAL WAFERS; EPITAXY SYSTEMS; MINIMUM SURFACES; N-TYPE AND P-TYPE DOPING; OPTIMIZED PROCESS; PROCESS-BASED; THICKNESS UNIFORMITY;

SILICON WAFERS;

EID: 37249072851     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.556-557.145     Document Type: Conference Paper

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