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Volumn 50, Issue 6 I, 2003, Pages 2322-2327

Heavy-Ion Single-Event Effects Testing of Lead-on-Chip Assembled High-Density Memories

Author keywords

Heavy ion irradiation; High density memories; Irradiation from the front or back side; Lead on chip; Plastic packaged; Preparation techniques; SDRAM; Single event effect testing; Single event upset; SRAM; Test approaches; Test facilities test analysis

Indexed keywords

ELECTRONICS PACKAGING; HEAVY IONS; ION BOMBARDMENT; RADIATION EFFECTS; SEMICONDUCTOR STORAGE; STATIC RANDOM ACCESS STORAGE;

EID: 1242265215     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2003.821402     Document Type: Conference Paper
Times cited : (15)

References (9)
  • 1
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    • Radiation pre-screening of 4-Mbit dynamic random access memories for space applications
    • La Grande-Motte. France
    • R. Harboe Sørensen, R. Müller, E. Daly, B. Nickson, J. Schmitt, and F. J. Rombeck, "Radiation pre-screening of 4-Mbit dynamic random access memories for space applications," in Proc. RADECS 1991 Conf., La Grande-Motte. France, 1991, pp. 489-504.
    • (1991) Proc. RADECS 1991 Conf. , pp. 489-504
    • Harboe Sørensen, R.1    Müller, R.2    Daly, E.3    Nickson, B.4    Schmitt, J.5    Rombeck, F.J.6
  • 2
    • 0005215420 scopus 로고
    • Radiation testing of flight lots for MARS-94 covering - Semiconductor types as 4-Mbit DRAM, 256-Kbit SRAM, 256-Kbit EEPROM and a 53C90 SCSI controller
    • Saint-Malo, France
    • R. Harboe Sørensen, P. Vuilleumier, L. Adams. B. Nickson, and R. Müller, "Radiation testing of flight lots for MARS-94 covering - semiconductor types as 4-Mbit DRAM, 256-Kbit SRAM, 256-Kbit EEPROM and a 53C90 SCSI controller," in Proc. RADECS 1993 Conf., Saint-Malo, France, 1993, pp. 490-498.
    • (1993) Proc. RADECS 1993 Conf. , pp. 490-498
    • Harboe Sørensen, R.1    Vuilleumier, P.2    Adams, L.3    Nickson, B.4    Müller, R.5
  • 3
    • 0029428904 scopus 로고
    • Heavy ion, proton and Co-60 radiation evaluation of 16-mbit Dram memories for space application
    • Madison, Wi
    • R. Harboe Sørensen, R. Müller, and S. Fraenkel, "Heavy ion, proton and Co-60 radiation evaluation of 16-Mbit DRAM memories for space application," in Proc. IEEE NSREC 1995 Workshop Rec., Madison, WI, 1995, pp. 42-49.
    • (1995) Proc. Ieee Nsrec 1995 Workshop Rec. , pp. 42-49
    • Harboe Sørensen, R.1    Müller, R.2    Fraenkel, S.3
  • 4
    • 0032291799 scopus 로고    scopus 로고
    • Radiation evaluation of 3.3 volt 16M-bit DRAM's for solid state mass memory applications
    • Newport Beach, CA
    • R. Harboe Sørensen, M. Bruggemann, R. Müller, and F. J. Rombeck, "Radiation evaluation of 3.3 volt 16M-bit DRAM's for solid state mass memory applications," in Proc. IEEE NSREC 1998 Workshop Rec., Newport Beach, CA, 1998, pp. 74-79.
    • (1998) Proc. IEEE NSREC 1998 Workshop Rec. , pp. 74-79
    • Harboe Sørensen, R.1    Bruggemann, M.2    Müller, R.3    Rombeck, F.J.4
  • 5
  • 7
    • 1242331617 scopus 로고    scopus 로고
    • Radiation effects testing at the 88-inch cyclotron
    • Fontevraud, France
    • M. A. MCMahan, "Radiation effects testing at the 88-inch cyclotron," in Proc. RADECS 1999 Conf., Fontevraud, France, 1999, pp. 142-147.
    • (1999) Proc. RADECS 1999 Conf. , pp. 142-147
    • McMahan, M.A.1
  • 8
    • 0035174450 scopus 로고    scopus 로고
    • SEE sensitivity determination of high-density DRAM's with limited-range heavy ions
    • Vancouver, BC, Canada
    • R. Koga, S. H. Crain, P. Yu, and K. B. Crawford, "SEE sensitivity determination of high-density DRAM's with limited-range heavy ions," in Proc. IEEE NSREC 2001 Workshop Rec., Vancouver, BC, Canada, 2001, pp. 182-189.
    • (2001) Proc. IEEE NSREC 2001 Workshop Rec. , pp. 182-189
    • Koga, R.1    Crain, S.H.2    Yu, P.3    Crawford, K.B.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.