The effect of active delay element resistance on limiting heavy ion SEU upset cross-sections of SOI ADE/SRAMs

IEEE Transactions on Nuclear Science

Volumn 54, Issue 6, 2007, Pages 2480-2487

  Liu, S T ^a,b   Nelson, D K ^b   Tsang, J C ^a,b   Golke, K ^b   Fechner, P ^b   Heikkila, W ^b   Brewster, N ^b   Van Cleave, R ^c   Liu, H Y ^d   McMarr, P J ^e   Hughes, H L ^a,e   Ziegler, J F ^a,f  

^a IEEE   (United States)

^b HONEYWELL TECHNOLOGY CENTER   (United States)

^c HONEYWELL   (United States)

^d SEAGATE TECHNOLOGY   (United States)

^e NAVAL RESEARCH LABORATORY   (United States)

^f UNITED STATES NAVAL ACADEMY   (United States)

Author keywords

Active delay element; Single event effects; SOI; SRAM; Upset cross section

Indexed keywords

ACTIVE DELAY ELEMENTS; DIMENSIONLESS FUNCTIONS; SINGLE EVENT EFFECTS; UPSET CROSS-SECTIONS;

ELECTRIC RESISTANCE; HEAVY IONS; SILICON ON INSULATOR TECHNOLOGY; TRANSISTORS;

STATIC RANDOM ACCESS STORAGE;

EID: 37249048424     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2007.910875     Document Type: Conference Paper

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