An atomic resolution scanning tunneling microscope that applies external tensile stress and strain in an ultrahigh vacuum

Nanotechnology

Volumn 19, Issue 2, 2008, Pages

  Fujita, D ^a   Kitahara, M ^a   Onishi, K ^a   Sagisaka, K ^a  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

SILICON WAFERS; TENSILE STRESS; THERMAL EFFECTS; ULTRAHIGH VACUUM;

ATOMIC RESOLUTION SCANNING TUNNELING MICROSCOPE; ATOMISTIC STRUCTURES; SINGLE DOMAIN SURFACES;

SCANNING TUNNELING MICROSCOPY;

DIMER; NANOMATERIAL; SILICON;

ARTICLE; ATOM; CHEMICAL BOND; IMAGING SYSTEM; MECHANICAL STRESS; PRIORITY JOURNAL; SCANNING TUNNELING MICROSCOPY; SURFACE PROPERTY; TEMPERATURE; VACUUM;

EID: 36849013435     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/19/02/025705     Document Type: Article

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