Poly-Si films with long carrier lifetime prepared by rapid thermal annealing of Cat-CVD amorphous silicon thin films

Thin Solid Films

Volumn 516, Issue 5, 2008, Pages 600-603

  Ohdaira, Keisuke ^a   Abe, Yuki ^a   Fukuda, Makoto ^a   Nishizaki, Shogo ^a   Usami, Noritaka ^b   Nakajima, Kazuo ^b   Karasawa, Takeshi ^c   Torikai, Tetsuya ^c   Matsumura, Hideki ^a  

^a JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

^c USHIO INC   (Japan)

Author keywords

Crystallization; Flash lamp annealing; Microcrystalline; Minority carrier lifetime; Raman scattering; Secondary ion mass spectroscopy (SIMS); Silicon; Solar cells

Indexed keywords

ANNEALING; CHEMICAL VAPOR DEPOSITION; CRYSTALLIZATION; MICROCRYSTALLINE SILICON; RAMAN SCATTERING; SECONDARY ION MASS SPECTROMETRY; SOLAR CELLS;

FLASH LAMP ANNEALING; MINORITY CARRIER LIFETIME;

POLYSILICON;

EID: 36749053429     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2007.06.216     Document Type: Article

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