Improvement in NBTI by catalytic-CVD silicon nitride for hp-65nm technology

Digest of Technical Papers - Symposium on VLSI Technology

Volumn 2005, Issue , 2005, Pages 88-89

  Yamamura, M ^a   Matsuki, T ^b   Robata, T ^b   Watanabe, T ^b   Inumiya, S ^b   Torii, K ^b   Saitou, T ^b,d   Amai, H ^b,e   Nara, Y ^b   Kitazoe, M ^c   Yuba, Y ^a   Akasaka, Y ^a  

^a OSAKA UNIVERSITY   (Japan)

^b SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INC   (Japan)

^c ULVAC INC   (Japan)

^d TOSHIBA CORPORATION   (Japan)

^e RENESAS TECHNOLOGY CORP   (Japan)

Author keywords

Catalytic CVD; Hydrogen; NBTI

Indexed keywords

CATALYST TEMPERATURE; CATALYTIC-CVD; NBTI;

CATALYSIS; CATALYSTS; CHEMICAL BONDS; CHEMICAL VAPOR DEPOSITION; HYDROGEN; MOSFET DEVICES; SILANES;

SILICON NITRIDE;

EID: 33745167958     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/.2005.1469223     Document Type: Conference Paper

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