Imaging of a single atomic column in silicon grain boundary

Journal of Electron Microscopy

Volumn 51, Issue 6, 2002, Pages 353-357

  Sawada, Hidetaka ^a,c   Ichinose, Hideki ^a   Kohyama, Masanori ^b  

^a UNIVERSITY OF TOKYO   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^c JEOL LTD   (Japan)

Author keywords

Atomic resolution; Atomic structure; Grain boundary; HVTEM; Projected potential image; Silicon

Indexed keywords

ARTICLE;

ATOMS; CRYSTAL ATOMIC STRUCTURE; ELECTRON MICROSCOPES; GRAIN BOUNDARIES; HIGH RESOLUTION ELECTRON MICROSCOPY;

ATOMIC COLUMNS; ATOMIC STRUCTURE; ATOMIC-RESOLUTION; DARK SPOTS; GRAIN-BOUNDARIES; HIGH VOLTAGE ELECTRON MICROSCOPY; HVTEM; PROJECTED POTENTIAL IMAGE; SILICON GRAINS; [110] DIRECTION;

SILICON;

EID: 0036999276     PISSN: 00220744     EISSN: None     Source Type: Journal    
DOI: 10.1093/jmicro/51.6.353     Document Type: Article

References (19)

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