Plasmon phenomena as origin of dc induced resistivity oscillations in two-dimensional electron systems

Applied Physics Letters

Volumn 91, Issue 22, 2007, Pages

  In̈arrea, Jesús ^a,b  

^a UNIVERSIDAD CARLOS III DE MADRID   (Spain)

^b INSTITUTO DE CIENCIA DE MATERIALES DE MADRID   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; ELECTRON GAS; MAGNETORESISTANCE; MATHEMATICAL MODELS; PLASMONS;

DC INDUCED RESISTIVITY; ELECTRON SYSTEMS; PLASMON PHENOMENA;

ELECTRONS;

EID: 36549020524     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2817960     Document Type: Article

References (22)

1. R. G. Mani, J. H. Smet, K. von Klitzing, V. Narayanamurti, W. B. Johnson, and V. Umansky, Nature (London) 420, 646 (2002).
2. M. A. Zudov, R. R. Du, N. Pfeiffer, and K. W. West, Phys. Rev. Lett. 90, 046807 (2003).
3. S. A. Studenikin, M. Potemski, A. Sachrajda, M. Hilke, L. N. Pfeiffer, and K. W. West, Phys. Rev. B 71, 245313 (2005).
4. A. A. Bykov, A. K. Bakarov, D. R. Islamov, and A. I. Toropov, JETP Lett. 84, 391 (2006).
5. C. Joas, J. Dietel, and F. von Oppen, Phys. Rev. B 72, 165323 (2005).
6. M. Torres and A. Kunold, Phys. Rev. B 71, 115313 (2005).
7. A. Auerbach and G. Venketeswara, e-print cond-mat/0612469.
8. R. G. Mani, J. H. Smet, K. von Klitzing, V. Narayanamurti, W. B. Johnson, and V. Umanski, Phys. Rev. Lett. 92, 146801 (2004).
9. C. L. Yang, R. R. Du, J. A. Simmons, and J. L. Reno, Phys. Rev. Lett. 89, 076801 (2002).
10. A. A. Bykov, J. Zhang, S. Vitkalov, A. K. Kalagin, and A. K. Bakarov, Phys. Rev. B 72, 245397 (2005).
11. W. Zhang, H. S. Chiang, M. A. Zudov, L. N. Pfeiffer, and K. W. West, Phys. Rev. B 75, 041304 (R) (2007).
12. X. L. Lei, Appl. Phys. Lett. 90, 132119 (2007).
13. J. In̈arrea and G. Platero, Phys. Rev. Lett. 0031-9007 10.1103/PhysRevLett.94.016806 94, 016806 (2005); J. In̈arrea and G. Platero, Phys. Rev. B 0163-1829 10.1103/PhysRevB.72.193414 72, 193414 (2005); J. In̈arrea and G. Platero, Appl. Phys. Lett. 89, 052109 (2006).
14. J. In̈arrea and G. Platero, Phys. Rev. Lett. 0031-9007 10.1103/PhysRevLett.94.016806 94, 016806 (2005); J. In̈arrea and G. Platero, Phys. Rev. B 0163-1829 10.1103/PhysRevB.72.193414 72, 193414 (2005); J. In̈arrea and G. Platero, Appl. Phys. Lett. 89, 052109 (2006).
15. J. In̈arrea and G. Platero, Phys. Rev. Lett. 0031-9007 10.1103/PhysRevLett.94.016806 94, 016806 (2005); J. In̈arrea and G. Platero, Phys. Rev. B 0163-1829 10.1103/PhysRevB.72.193414 72, 193414 (2005); J. In̈arrea and G. Platero, Appl. Phys. Lett. 89, 052109 (2006).
16. J. In̈arrea and G. Platero, Appl. Phys. Lett. 0003-6951 10.1063/1.2364856 89, 172114 (2006); J. In̈arrea and G. Platero, Appl. Phys. Lett. 0003-6951 10.1063/1.2734506 90, 172118 (2007); J. In̈arrea, Appl. Phys. Lett. 0003-6951 10.1063/1.2751585 90, 262101 (2007); J. In̈arrea, G. Platero, and C. Tejedor, Semicond. Sci. Technol. 0268-1242 10.1088/0268-1242/9/ 5S/031 9, 515 (1994); J. In̈arrea and G. Platero, Phys. Rev. B 51, 5244 (1995).
17. J. In̈arrea and G. Platero, Appl. Phys. Lett. 0003-6951 10.1063/1.2364856 89, 172114 (2006); J. In̈arrea and G. Platero, Appl. Phys. Lett. 0003-6951 10.1063/1.2734506 90, 172118 (2007); J. In̈arrea, Appl. Phys. Lett. 0003-6951 10.1063/1.2751585 90, 262101 (2007); J. In̈arrea, G. Platero, and C. Tejedor, Semicond. Sci. Technol. 0268-1242 10.1088/0268-1242/9/ 5S/031 9, 515 (1994); J. In̈arrea and G. Platero, Phys. Rev. B 51, 5244 (1995).
18. J. In̈arrea and G. Platero, Appl. Phys. Lett. 0003-6951 10.1063/1.2364856 89, 172114 (2006); J. In̈arrea and G. Platero, Appl. Phys. Lett. 0003-6951 10.1063/1.2734506 90, 172118 (2007); J. In̈arrea, Appl. Phys. Lett. 0003-6951 10.1063/1.2751585 90, 262101 (2007); J. In̈arrea, G. Platero, and C. Tejedor, Semicond. Sci. Technol. 0268-1242 10.1088/0268-1242/9/ 5S/031 9, 515 (1994); J. In̈arrea and G. Platero, Phys. Rev. B 51, 5244 (1995).
19. J. In̈arrea and G. Platero, Appl. Phys. Lett. 0003-6951 10.1063/1.2364856 89, 172114 (2006); J. In̈arrea and G. Platero, Appl. Phys. Lett. 0003-6951 10.1063/1.2734506 90, 172118 (2007); J. In̈arrea, Appl. Phys. Lett. 0003-6951 10.1063/1.2751585 90, 262101 (2007); J. In̈arrea, G. Platero, and C. Tejedor, Semicond. Sci. Technol. 0268-1242 10.1088/0268-1242/9/ 5S/031 9, 515 (1994); J. In̈arrea and G. Platero, Phys. Rev. B 51, 5244 (1995).
20. J. In̈arrea and G. Platero, Appl. Phys. Lett. 0003-6951 10.1063/1.2364856 89, 172114 (2006); J. In̈arrea and G. Platero, Appl. Phys. Lett. 0003-6951 10.1063/1.2734506 90, 172118 (2007); J. In̈arrea, Appl. Phys. Lett. 0003-6951 10.1063/1.2751585 90, 262101 (2007); J. In̈arrea, G. Platero, and C. Tejedor, Semicond. Sci. Technol. 0268-1242 10.1088/0268-1242/9/ 5S/031 9, 515 (1994); J. In̈arrea and G. Platero, Phys. Rev. B 51, 5244 (1995).
21. R. K. Wangsness, Electromagnetics Fields, 1st ed. (Wiley, New York, 1979), p. 74.
22. N. W. Ashcroft and N. D. Mermin, Solid State Physics, 1st ed. (Saunders, Philadelphia, 1976), p. 19.