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Volumn 310, Issue 1, 2008, Pages 91-95
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Electrical properties of semi-insulating CdTe0:9Se0:1:Cl crystal and its surface preparation
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Author keywords
A1. Surface processes; A2. Bridgman technique; B3. Semiconducting II IV materials
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Indexed keywords
ATOMIC FORCE MICROSCOPY;
BROMINE;
CADMIUM COMPOUNDS;
ETCHING;
PHOTOLUMINESCENCE;
ELECTRODE DEPOSITION;
ENERGY RESOLUTION;
MOBILITY LIFETIME;
RADIOACTIVE SOURCE;
SURFACE PREPARATION;
CRYSTAL STRUCTURE;
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EID: 36549012178
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jcrysgro.2007.10.009 Document Type: Article |
Times cited : (22)
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References (9)
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