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Current Applied Physics

Volumn 5, Issue 4, 2005, Pages 392-396

The surface passivation of Cd1-xZnxTe as to ZnS thickness and pre-heating

(5) Kim, Young Hun a Kim, Sung Hoon b Kim, In Jae c An, Se Young d Kim, Ki Hyun e

a Korea Advanced Institute of Science and Technology (KAIST) (South Korea)

b Silla University (South Korea)

c Digit Radiogr Technol Corporation (South Korea)

d Korea Institute of Science and Technology (South Korea)

e Digit Excelline in Medicare Corp (South Korea)

Author keywords

CdZnTe; Passivation; Photoluminescence; ZnS

Indexed keywords

ATOMIC FORCE MICROSCOPY; CURRENT VOLTAGE CHARACTERISTICS; DIELECTRIC MATERIALS; ELECTRON ENERGY LEVELS; ELECTRONIC PROPERTIES; MORPHOLOGY; OPTICAL PROPERTIES; PASSIVATION; PHOTOLUMINESCENCE; PREHEATING; THICKNESS MEASUREMENT; ZINC SULFIDE;

CADMIUM ZINC TELLURIDE; PHOTOLUMINESCENCE MEASUREMENT; SURFACE PASSIVATION;

SEMICONDUCTING CADMIUM TELLURIDE;

EID: 13844311430 PISSN: 15671739 EISSN: None Source Type: Journal
DOI: 10.1016/j.cap.2004.04.004 Document Type: Article

Times cited : (8)

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