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Volumn 84, Issue 1, 1998, Pages 237-247

X-ray diffraction study of intentionally disordered (GaIn)As/Ga(PAs) heterostructures

Author keywords

[No Author keywords available]

Indexed keywords


EID: 3643079694     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.368074     Document Type: Article
Times cited : (1)

References (36)
  • 2
    • 0004173691 scopus 로고
    • X. Chen and S. Xiong, Phys. Rev. B 47, 7146 (1993); Phys. Rev. B 48, 5273 (1993).
    • (1993) Phys. Rev. B , vol.47 , pp. 7146
    • Chen, X.1    Xiong, S.2
  • 3
    • 3643051134 scopus 로고
    • X. Chen and S. Xiong, Phys. Rev. B 47, 7146 (1993); Phys. Rev. B 48, 5273 (1993).
    • (1993) Phys. Rev. B , vol.48 , pp. 5273
  • 19
    • 3643050071 scopus 로고
    • See references in Proceedings of the 13th International Conference on Semiconductor Lasers, Takamatsu, 1992; Special issue on strained-layer optoelectronic materials and devices, IEEE J. Quantum Electron. 30, 349 (1994).
    • (1994) IEEE J. Quantum Electron. , vol.30 , pp. 349
  • 32
    • 23544461517 scopus 로고
    • The key importance of this product for XRD characterization has been proven for a thin layer sandwiched between two cladding layers [L. Tapfer and K. Ploog, Phys. Rev. B 40, 9802 (1989)].
    • (1989) Phys. Rev. B , vol.40 , pp. 9802
    • Tapfer, L.1    Ploog, K.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.