메뉴 건너뛰기




Volumn 170, Issue 1-4, 1997, Pages 748-751

Growth and structural properties of (GaIn) As/Ga(PAs) intentionally disordered superlattice structures grown by metalorganic vapor phase epitaxy

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; MULTILAYERS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SUPERLATTICES; X RAY DIFFRACTION ANALYSIS;

EID: 0030717867     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(96)00511-8     Document Type: Article
Times cited : (1)

References (15)
  • 1
    • 0009548468 scopus 로고
    • Condensed Systems of Low Dimensionality, Ed. J.L. Beeby, (Plenum, New York)
    • For example: J. Singh, in: Condensed Systems of Low Dimensionality, Ed. J.L. Beeby, NATO ASI Ser. B, Vol. 253 (Plenum, New York, 1991) p. 653.
    • (1991) NATO ASI Ser. B , vol.253 , pp. 653
    • Singh, J.1
  • 3
    • 30244485484 scopus 로고
    • See references, in: Proc. 13th Int. Conf. Semiconductor Lasers, Takamatsu (1992); IEEE J. Quantum Electron. 29 (1993).
    • (1993) IEEE J. Quantum Electron. , vol.29
  • 9
    • 3643051134 scopus 로고
    • X. Chen and S. Xiong, Phys. Rev. B 47 (1993) 7146; 48 (1993) 5273.
    • (1993) Phys. Rev. B , vol.48 , pp. 5273


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.