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Volumn 88, Issue 2, 2000, Pages 883-888

Room temperature polarized photoreflectance characterization of GaAlAs/InGaAs/GaAs high electron mobility transistor structures including the influence of strain relaxation

(7) Chen, T H a Huang, Y S a Lin, D Y b Pollak, Fred H c Goorsky, M S d Streit, D C e Wojtowicz, M e

a NATIONAL TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY (Taiwan)

b NAN KAI UNIVERSITY OF TECHNOLOGY (Taiwan)

c CITY UNIVERSITY OF NEW YORK (United States)

d UNIVERSITY OF CALIFORNIA (United States)

e NORTHROP GRUMMAN CORPORATION (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 3643066112 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.373751 Document Type: Article

Times cited : (3)

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