Epitaxial properties of Co-doped ZnO thin films grown by plasma assisted molecular beam epitaxy

Chinese Physics Letters

Volumn 24, Issue 10, 2007, Pages 2951-2954

  Cao, Qiang ^a   Deng, Jiang Xia ^a   Liu, Guo Lei ^a   Chen, Yan Xue ^a   Yan, Shi Shen ^a   Mei, Liang Mo ^a  

^a NONE

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; ALUMINUM OXIDE; ATOMIC FORCE MICROSCOPY; COBALT; II-VI SEMICONDUCTORS; METALLIC FILMS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MOLECULAR OXYGEN; OPTICAL FILMS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTOR DOPING; SINGLE CRYSTALS; SUBSTRATES; THIN FILMS; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS;

CO-DOPED ZNO; CONDITION; DOPED ZNO THIN FILMS; HIGH QUALITY; LOW SUBSTRATE TEMPERATURE; OXYGEN PLASMA-ASSISTED MOLECULAR-BEAM EPITAXY; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY; PROPERTY; SINGLE-CRYSTALLINE; SITU REFLECTION;

ZINC OXIDE;

EID: 36348987837     PISSN: 0256307X     EISSN: 17413540     Source Type: Journal    
DOI: 10.1088/0256-307X/24/10/066     Document Type: Article

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