A high mobility ambipolar field effect transistor using a 2,6-diphenylbenzo[1,2-b:4,5-b ′]diselenophene/fullerene double layer

Solid State Communications

Volumn 145, Issue 3, 2008, Pages 114-117

  Kinoshita, Shohei ^a   Sakanoue, Tomo ^a   Yahiro, Masayuki ^a   Takimiya, Kazuo ^b   Ebata, Hideaki ^b   Ikeda, Masaaki ^c   Kuwabara, Hirokazu ^c   Adachi, Chihaya ^a  

^a KYUSHU UNIVERSITY   (Japan)

^b HIROSHIMA UNIVERSITY   (Japan)

^c NIPPON KAYAKU CO LTD   (Japan)

Author keywords

A. Organic semiconductor; D. Ambipolar; D. FET; D. High mobility

Indexed keywords

ELECTRON MOBILITY; ELECTRON TRAPS; FIELD EFFECT TRANSISTORS; HOLE MOBILITY; SEMICONDUCTING ORGANIC COMPOUNDS;

CRYSTALLINE TEXTURE; DISELENOPHENE/FULLERENE DOUBLE LAYER; DOUBLE-LAYER STRUCTURE;

FULLERENES;

EID: 36348987231     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssc.2007.10.017     Document Type: Article

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