Surface plasma wave interactions between semiconductor and electromagnetic space harmonics from microwave to THz range

Thin Solid Films

Volumn 464-465, Issue , 2004, Pages 464-468

  Iizuka, Kouichi ^a   Hashim, Abdul Manaf Bin ^b   Hasegawa, Hideki ^b  

^a Employment Promotion Project Corporation   (Japan)

^b HOKKAIDO UNIVERSITY   (Japan)

Author keywords

Drift plasma; GaAs; InP; Interface state admittance; Surface plasma waves; THz device

Indexed keywords

CHARGE CARRIERS; ELECTRIC CONDUCTANCE; ELECTROMAGNETIC SHIELDING; GREEN'S FUNCTION; HARMONIC GENERATION; MICROWAVES; PERMITTIVITY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SURFACE PLASMON RESONANCE;

DRIFT PLASMAS; GAAS; INP; INTERFACE STATE ADMITTANCE; SURFACE PLASMA WAVES; THZ DEVICES;

SEMICONDUCTOR DEVICES;

EID: 4544388473     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2004.06.103     Document Type: Article

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