Plasma wave interactions in the microwave to THz range between carriers in a semiconductor 2DEG and interdigital slow waves

Superlattices and Microstructures

Volumn 34, Issue 3-6, 2003, Pages 531-537

  Hashim, Abdul Manaf ^a   Hashizume, Tamotsu ^a   Iizuka, Kouichi ^b   Hasegawa, Hideki ^a  

^a HOKKAIDO UNIVERSITY   (Japan)

^b Employment Promotion Project Corporation   (Japan)

Author keywords

HEMT; Interdigital structure; Plasma wave; Surface wave; Terahertz; Traveling wave

Indexed keywords

ELECTRIC FIELDS; ELECTROMAGNETIC WAVES; ELECTRONS; FREQUENCIES; GREEN'S FUNCTION; HIGH ELECTRON MOBILITY TRANSISTORS; MICROWAVES; NUMERICAL METHODS; SEMICONDUCTOR DEVICES; SURFACE WAVES; VELOCITY;

INTERDIGITAL STRUCTURE; TERAHERTZ; TRANSVERSE MAGNETIC (TM); TRAVELING WAVE;

PLASMA WAVES;

EID: 3242702244     PISSN: 07496036     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.spmi.2004.03.054     Document Type: Conference Paper

References (4)

1. Dyakonov M., Shur M. IEEE Trans. Electron Devices. 46:1996;380.
2. Sumi M. Jpn. J. Appl. Phys. 6:1967;688.
3. Hasegawa H., Furukawa M., Yanai H. IEEE Trans. Microw. Theory Tech. MTT-19:(11):1971;869.
4. Seki S., Hasegawa H. IEEE Trans. Microw. Theory Tech. MTT-32:1984;1715.