Quantum dot modelocked and broad-band lasers for optical interconnect solutions

Conference Digest - IEEE International Semiconductor Laser Conference

Volumn , Issue , 2006, Pages 147-148

  Kovsh, A ^a   Gubenko, A ^a   Krestnikov, I ^a   Livshits, D ^a   Mikhrin, S ^a   Zhukov, A ^b   Portnoi, E ^b  

^a NL Nanosemiconductor GmbH   (Germany)

^b IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC POWER UTILIZATION; EMISSION SPECTROSCOPY; LASER MODE LOCKING; MONOLITHIC INTEGRATED CIRCUITS;

BROAD-BAND LASERS; QUANTUM-DOT LASERS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 36249003686     PISSN: 08999406     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/islc.2006.1708129     Document Type: Conference Paper

References (5)

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2. L. Zhang, L. Cheng, A.L. Gray, et al., "Low timing jitter, 5 GHz optical pulses from monolithic two-section passively mode-locked 1250/1310 nm quantum dot lasers for high speed optical interconnects", The Optical Fiber Communication Conference and Exposition and the National Fiber Optic Engineers Conference (OFC/NFOEC 2005), (March 6-11, 2005, Anaheim, CA, USA), Paper OWM4.
3. M. Sugawara, K. Mukai, and Y. Nakata, "Light emission spectra of columnar-shaped self-assembled InGaAs/GaAs quantum-dot lasers: Effect of homogeneous broadening of the optical gain on lasing characteristics" Appl. Phys. Lett., vol. 74,pp. 1561-1563, 1999.
4. S.S. Mikhrin, A.E. Zhukov, A.R. Kovsh, et al., "A spatially single-mode laser for a range of 1.25-1.28μm on the basis of InAs quantum dots on a GaAs substrate", Semiconductors, vol. 34, pp. 119-121 (2000).
5. A.E. Zhukov, A.R. Kovsh, V.M. Ustinov, et al., "Continuous wave operation of long-wavelength quantum, dot diode laser on a GaAs substrate", IEEE Photon. Technol. Lett., vol. 11,pp. 1345-1347, 1999.