Large negative magnetoresistance in Ge films at ultralow temperatures and low magnetic fields

Applied Physics Letters

Volumn 91, Issue 20, 2007, Pages

  Mitin, V F ^a   Dugaev, V K ^b   Ihas, G G ^c  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

^b RZESZOW UNIVERSITY OF TECHNOLOGY   (Poland)

^c UNIVERSITY OF FLORIDA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONDUCTIVITY; GERMANIUM; LOW TEMPERATURE EFFECTS; MAGNETIC FIELD EFFECTS; MAGNETORESISTANCE; THERMOMETERS;

LOCALIZATION CORRECTIONS; ULTRALOW TEMPERATURES;

SEMICONDUCTING FILMS;

EID: 36248976989     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2813615     Document Type: Article

References (12)

1. Some preliminary results has been reported at the conferences LT-22 [V. F. Mitin, J. McFarland, G. Ihas, and V. K. Dugaev, Physica B 0921-4526 284-288, 1996 (2000)] and LT-24 [V. F. Mitin, V. K. Dugaev, and G. G. Ihas, AIP Conf. Proc. 850, 1472 (2006)].
2. Some preliminary results has been reported at the conferences LT-22 [V. F. Mitin, J. McFarland, G. Ihas, and V. K. Dugaev, Physica B 0921-4526 284-288, 1996 (2000)] and LT-24 [V. F. Mitin, V. K. Dugaev, and G. G. Ihas, AIP Conf. Proc. 850, 1472 (2006)].
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