Young's modulus measurements in standard IC CMOS processes using MEMS test structures

IEEE Electron Device Letters

Volumn 28, Issue 11, 2007, Pages 960-963

  Marshall, Janet C ^a   Herman, David L ^a   Vernier, P Thomas ^b   DeVoe, Don L ^c   Gaitan, Michael ^a  

^a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^b UNIVERSITY OF SOUTHERN CALIFORNIA   (United States)

^c UNIVERSITY OF MARYLAND   (United States)

Author keywords

CMOS; MEMS; Residual stress; Resonance; Test structures; Thickness measurements; Young's modulus

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELASTIC MODULI; NATURAL FREQUENCIES; PIEZOELECTRIC TRANSDUCERS; RESIDUAL STRESSES; THICKNESS MEASUREMENT; THIN FILMS;

LASER DOPPLER VIBROMETER; MICROMACHINED CANTILEVERS; THIN-FILM LAYERS;

MEMS;

EID: 36148985765     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2007.906460     Document Type: Article

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