Computer simulation of high-energy-beam irradiation of single-crystalline silicon

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 264, Issue 2, 2007, Pages 259-266

  Sasajima, Y ^a   Akabane, T ^a   Nakazawa, T ^b   Iwase, A ^c  

^a IBARAKI UNIVERSITY   (Japan)

^b JAPAN ATOMIC ENERGY AGENCY   (Japan)

^c Osaka Prefecture University   (Japan)

Author keywords

Computer simulation; High energy beam irradiation; Molecular dynamics; Single crystalline silicon; Thermal dissipation; Thermal spike model

Indexed keywords

COMPUTER SIMULATION; ENERGY DISSIPATION; MOLECULAR DYNAMICS; SILICON; STRUCTURAL RELAXATION; THERMAL ENERGY;

ENERGY DENSITY; HIGH-ENERGY-BEAM IRRADIATION; NANOMETER-ORDER RADIUS; TERSOFF POTENTIAL; THERMAL DISSIPATION; THERMAL SPIKE MODELS;

SINGLE CRYSTALS;

EID: 36049052619     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2007.08.096     Document Type: Article

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