Structural characterization of epitaxial Si/Pr2O3 / Si(111) heterostructures

Solid State Phenomena

Volumn 108-109, Issue , 2005, Pages 741-746

  Zaumseil, P ^a   Schroeder, T ^a   Weidner, G ^a  

^a IHP   (Germany)

Author keywords

GI XRD; Heteroepitaxy; High k material; SIS structure; TEM; XRD

Indexed keywords

CRYSTAL ORIENTATION; DEFECTS; EPITAXIAL GROWTH; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; PRASEODYMIUM COMPOUNDS; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

CRYSTAL PERFECTION; FUTURE APPLICATIONS; HIGH-K MATERIALS; IN-PLANE ORIENTATION; INTERFACE ROUGHNESS; SI(111) SUBSTRATE; STRUCTURAL CHARACTERIZATION; X RAY REFLECTIVITY;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 36049002467     PISSN: 10120394     EISSN: 16629779     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/SSP.108-109.741     Document Type: Conference Paper

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