Spin-on n-type silicon films using phosphorous-doped polysilanes

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 46, Issue 36-40, 2007, Pages

  Tanaka, Hideki ^a   Iwasawa, Haruo ^b   Wang, Daohai ^b   Toyoda, Naoyuki ^a   Aori, Takashi ^a   Yudasara, Ichio ^a   Matsuki, Yasuo ^b   Shimoda, Tatsuya ^a,c   Furusawa, Masahiro ^a  

^a SEIKO EPSON CORPORATION   (Japan)

^b JSR CORPORATION   (Japan)

^c JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

Author keywords

Copolymerization; Cyclopentasilane; Liquid precursor; Liquid silicon; N type silicon; Phosphorus; Polysilane; Resistivity; Solution process

Indexed keywords

CYCLOPENTASILANE; LIQUID PRECURSORS; LIQUID SILICON; N-TYPE SILICON; SOLUTION PROCESS;

AMORPHOUS FILMS; AMORPHOUS SILICON; COPOLYMERIZATION; PHOTOPOLYMERIZATION; POLYSILANES; POLYSILICON; SOLUTIONS; SYNTHESIS (CHEMICAL);

METALLIC FILMS;

EID: 36048948228     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.46.L886     Document Type: Article

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