Demonstration of a mid-infrared silicon Raman amplifier

Optics Express

Volumn 15, Issue 22, 2007, Pages 14355-14362

  Raghunathan, Varun ^a   Borlaug, David ^a   Rice, Robert R ^b   Jalali, Bahram ^a  

^a University of California   (United States)

^b NORTHROP GRUMMAN CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DATA COMMUNICATION EQUIPMENT; INFRARED RADIATION; PHOTONICS; REMOTE SENSING; SILICON;

BIOCHEMICAL DETECTION; FREE CARRIER SCATTERING RATE; LASER MEDICINE;

AMPLIFIERS (ELECTRONIC);

EID: 35948962400     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.15.014355     Document Type: Article

References (23)

1. O. Boyraz and B. Jalali, "Demonstration of a silicon Raman laser," Opt. Express 12, 5269-5273 (2004).
2. H. Rong, R. Jones, A. Liu, O. Cohen, D. Hak, A. Fang and M. Pannicia, "A continuous-wave Raman silicon laser," Nature 433, 725-728 (2005).
3. V. Raghunathan, O. Boyraz and B. Jalali, "20 dB on-off Raman amplification in silicon waveguides," CLEO 2005, Baltimore, MD, May 2005, CMU1.
4. A. Liu, H. Rong, M. Paniccia, O. Cohen, and D. Hak, "Net optical gain in a low loss silicon-on-insulator waveguide by stimulated Raman scattering," Opt. Express 12, 4261-4268, (2004).
5. D. Dimitropoulos, S. Fathpour, and B. Jalali, "Limitations of active carrier removal in silicon Raman amplifiers and lasers," Appl. Phys. Lett. 87, 261108 (2005).
6. R. A. Soref, S. J. Emelett, and W. R. Buchwald, "Silicon waveguided components for the long-wave infrared region," J. Opt. A 8, 840-848 (2006).
7. B. Jalali, V. Raghunathan, R. Shori, S. Fathpour, D. Dimitropoulos, and O. Stafsudd, "Prospects for silicon mid-IR Raman lasers," IEEE J. Sel. Top. Quantum Electron. 12, 1618-1627 (2006).
8. V. Raghunathan, R. Shori, O. M. Stafsudd, and B. Jalali, "Nonlinear absorption in silicon and the prospects of mid-infrared Silicon Raman laser," Phys. Status Solidi. (A) 203, R38-R40 (2006).
9. I. T. Sorokina and K. L. Vodpyanov, Solid state mid infrared laser sources, (Springer Topics in Applied Physics, 2003).
10. A. Kier, ed., Mid infrared semiconductor optoelectronics, (Springer series in Optoelectronics, 2006).
11. L. Meyers and W. Bosenberg, "Periodically-poled lithium niobate and quasi-phase matched optical parametric oscillators," IEEE J. Quantum Electron. 33, 1663-1672 (1997).
12. A. Zajac, M. Skorczakowski, Jacek Swiderski, and P. Nyga, "Electrooptically Q-switched mid-infrared Er:YAG laser for medical applications," Opt. Express 12, 5125-5130 (2004).
13. 4 crystal under 1.9 and 1.56μm pumping," Laser Phys. Lett. 3, 17-20 (2005).
14. H. M. Pask, "The design and operation of solid-state Raman lasers," Prog. Quantum Electron. 27, 3-56, (2003).
15. V. Raghunathan, H. Renner, R. Rice, and B. Jalali, "Self-imaging silicon Raman amplifier," Opt. Express 13, 3396-3408 (2007).
16. rd ed., (John Wiley and Sons, New York, 1988).
17. D. Dimitropoulos, B. Houshmand, R. Claps, and B. Jalali, "Coupled-mode theory of Raman effect in silicon-on-insulator waveguides," Opt. Lett. 28, 1954-1956 (2003).
18. R. Claps, D. Dimitropoulos, V. Raghunathan, Y. Han, and B. Jalali, "Observation of stimulated Raman scattering in Silicon waveguides," Opt. Express 11, 1731-1739 (2003).
19. T. K. Liang and H. K. Tsang, "Role of free carriers from two-photon absorption in Raman amplification in silicon-on-insulator waveguides," Appl. Phys. Lett. 84, 2745-2747 (2004).
20. R. Claps, V. Raghunathan, D. Dimitropoulos, and B. Jalali, "Influence of nonlinear absorption on Raman amplification in Silicon waveguides," Opt. Express 12, 2774-2780 (2004).
21. A. E. Siegman, "How to (may be) measure laser beam quality," Tutorial OSA Annual Meeting (1997).
22. N. Bloembergen, "Laser induced Electric breakdown in solids," IEEE J. Quantum Electron. 10, 375-386 (1974).
23. P. P. Pronko, P. A. VanRompay, C. Horvath, F. Loesel, T. Juhasz, X. Liu, and G. Mourou, "Avalanche ionization and dielectric breakdown in silicon with ultrafast laser pulses," Phys. Rev. B 58, 2387-2390 (1998).