Effects of bottom electrode and environmental insulator on thermal distribution of edge contact-type PRAM cell

Microelectronics Journal

Volumn 38, Issue 10-11, 2007, Pages 1034-1037

  Youm, Minsoo ^a,b   Kim, Yong Tae ^a   Sung, Man Young ^b  

^a Korea Institute of Science and Technology   (South Korea)

^b Korea University   (South Korea)

Author keywords

Chalcogenide; Ge2Sb2Te5; Phase change memory

Indexed keywords

AMORPHOUS MATERIALS; CRYSTALLINE MATERIALS; ELECTRIC INSULATORS; PHASE CHANGE MEMORY; SILICON COMPOUNDS; THERMAL CONDUCTIVITY; TITANIUM COMPOUNDS;

CHALCOGENIDE; PHASE CHANGING;

ELECTRODES;

EID: 35848940065     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mejo.2007.07.120     Document Type: Article

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