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Volumn 517, Issue , 2006, Pages 232-236

Fabrication and characterization of uniform quantum size porous silicon

Author keywords

Infrared spectroscopy; Porous silicon; Surface passivation

Indexed keywords

ETCHING; INFRARED SPECTROSCOPY; MICROSTRUCTURE; PASSIVATION; QUANTUM CONFINEMENT; SURFACE PROPERTIES;

EID: 35748974516     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/0-87849-404-9.232     Document Type: Conference Paper
Times cited : (5)

References (13)
  • 5
    • 0001359747 scopus 로고    scopus 로고
    • M. A. Tischler, R. T. Collins. J. H. Stathis and J. C. Tsang: Appl. Phys. Lett. 60 (1992), p. 639.
    • M. A. Tischler, R. T. Collins. J. H. Stathis and J. C. Tsang: Appl. Phys. Lett. Vol. 60 (1992), p. 639.
  • 11
    • 35748962103 scopus 로고    scopus 로고
    • M. H. Bordsky, M. Cardona, and Cuomo: J. Phy. Rev. B 16 (1971), p. 3356.
    • M. H. Bordsky, M. Cardona, and Cuomo: J. Phy. Rev. B Vol. 16 (1971), p. 3356.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.