Optical bandwidth enhancement by operation and modulation of the first excited state of a transistor laser

Applied Physics Letters

Volumn 91, Issue 18, 2007, Pages

  Then, H W ^a   Feng, M ^a   Holonyak, N ^a  

^a University of Illinois at Urbana Champaign   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; BOUNDARY CONDITIONS; CHARGE DENSITY; EXCITED STATES; OPTICAL BAND GAPS;

ELECTRICAL COLLECTORS; EMITTER TO COLLECTOR POPULATION DISTRIBUTION; TRANSISTOR BOUNDARY CONDITIONS; TRANSISTOR LASERS;

LASERS;

EID: 35648968073     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2805014     Document Type: Article

References (7)

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3. M. Feng, N. Holonyak, Jr., G. Walter, and R. Chan, Appl. Phys. Lett. 87, 131103 (2005).
4. E. A. Rezek, H. Shichijo, B. A. Vojak, and N. Holonyak, Jr., Appl. Phys. Lett. 31, 534 (1977).
5. M. Feng, N. Holonyak, Jr., A. James, K. Cimino, G. Walter, and R. Chan, Appl. Phys. Lett. 89, 113504 (2006).
6. H. Statz and G. deMars, Quantum Electronics (Columbia University Press, New York, NY, 1960), p. 650.
7. M. Feng, N. Holonyak, Jr., H. W. Then, and G. Walter, Appl. Phys. Lett. 91, 053501 (2007).