Affordable high-performance LW IRFPAs made from HgCdTe grown by MOVPE

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6542, Issue I, 2007, Pages

  Hipwood, L G ^a   Jones, C L ^a   Walker, D ^a   Shaw, C J ^a   Abbott, P ^a   Catchpole, R A ^a   Ordish, M ^a   Maxey, C D ^a   Lau, H W ^a   Knowles, P ^a   Wilson, M C ^a  

^a SELEX Sensors and Airborne Systems Infrared Limited   (United Kingdom)

Author keywords

Defects; HgCdTe; Hybrid; IRFPA; LWIR; Photodiodes

Indexed keywords

CADMIUM COMPOUNDS; EPITAXIAL GROWTH; FABRICATION; SEMICONDUCTING GALLIUM ARSENIDE; TELLURIUM COMPOUNDS; WSI CIRCUITS;

INFRARED FOCAL PLANE ARRAYS (IRFPA); METAL ORGANIC VAPOUR PHASE EPITAXY (MOVPE); SILICON READ-OUT INTEGRATED CIRCUITS (ROIC); TRAP-ASSISTED TUNNELLING (TAT); WAFER SCALE PROCESSING;

MERCURY COMPOUNDS;

EID: 35648954585     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.720647     Document Type: Conference Paper

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