Enabling defect-free masks for extreme ultraviolet lithography

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6533, Issue , 2007, Pages

  Jeon, Chan Uk ^a   Kearney, Patrick ^a   Ma, Andy ^a   Beier, Bernd ^c   Uno, Toshiyuki ^d   Randive, Rajul ^b   Reiss, Ira ^b  

^a SEMATECH   (United States)

^b VEECO INSTRUMENTS INC   (United States)

^c Schott Lithotec ^*  (Germany)

^d ASAHI GLASS CO LTD   (Japan)

Author keywords

Defect density; Extreme ultraviolet lithography; Ion beam sputtering; Mask; Mo Si; Nano particle analysis

Indexed keywords

ION BEAM SPUTTERING; LOW DEFECT DEPOSITION; NANOPARTICLE ANALYSIS;

DEFECT DENSITY; EXTREME ULTRAVIOLET LITHOGRAPHY; ION BEAMS; MULTILAYERS; NANOPARTICLES;

MASKS;

EID: 35648932877     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.737160     Document Type: Conference Paper

References (5)

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2. P. Kearney, W. Cho, C. Jeon, " State of the art EUV mask blank inspection with a Lasertec M7360 at the SEMATECH MBDC," '06 international Symposium on Extreme Ultraviolet Lithography Barcelona, Spain
3. D. Flamm, F. Frost, D. Hirsch, Appl. Surface Science 179 (2001) 95-101
4. P.B. Mirkarimi, et al., Journal of Microlith., Microfab., and Microsys. 3, 139 (2004)
5. A. Ma, P. Kearney, D. Krick, "Process towards the development of a commercial tool and process for EUVL mask blanks," SPIE Vol 5751 pp 168-177 (2005)