|
|
|
Volumn 810, Issue , 2004, Pages
|
|
Silicon Frond-End Junction Formation - Physics and Technology
[No Author Info available]
|
|
Author keywords
[No Author keywords available]
|
|
Indexed keywords
ACTIVATION ENERGY;
AMORPHIZATION;
ATOMIC FORCE MICROSCOPY;
CAPACITORS;
CMOS INTEGRATED CIRCUITS;
ENERGY DISPERSIVE SPECTROSCOPY;
EPITAXIAL GROWTH;
LEAKAGE CURRENTS;
RAPID THERMAL ANNEALING;
SCANNING ELECTRON MICROSCOPY;
SECONDARY ION MASS SPECTROMETRY;
SEMICONDUCTOR DOPING;
SENSITIVITY ANALYSIS;
SILICON;
THIN FILM TRANSISTORS;
X RAY DIFFRACTION ANALYSIS;
CAPACITOR DISCHARGE FLASH;
CONTACT RESISTANCE;
EIREV;
JUNCTION LEAKAGES;
LASER THERMAL PROCESSING (LTP);
OPTICAL RADIATION;
PARASITIC RESISTANCE;
SHEET RESISTANCE;
SOLID PHASE EPITAXY (SPE);
THERMAL ACTIVATION;
SEMICONDUCTOR JUNCTIONS;
|
|
EID: 5544308282
PISSN: 02729172
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Review |
|
Times cited : (4)
|
|
References (0)
|