NANODEV: A nanoelectronic-device simulation software system

Russian Microelectronics

Volumn 32, Issue 2, 2003, Pages 97-104

  Abramov, I I ^a   Goncharenko, I A ^a   Ignatenko, S A ^a   Korolev, A V ^a   Novik, E G ^a   Rogachev, A I ^a  

^a BELARUSIAN STATE UNIVERSITY OF INFORMATICS AND RADIOELECTRONICS   (Belarus)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; COMPUTER SIMULATION; COMPUTER SOFTWARE; ELECTRIC POTENTIAL; ELECTRONIC EQUIPMENT; INTEGRATED CIRCUITS; MATHEMATICAL MODELS; QUANTUM ELECTRONICS; TRANSISTORS; TUNNEL DIODES;

NANOELECTRONIC; RADIOELECTRONICS; SINGLE-ELECTRON BOXES; SINGLE-ELECTRON TUNNELING (SET);

NANOTECHNOLOGY;

EID: 3543100492     PISSN: 10637397     EISSN: None     Source Type: Journal    
DOI: 10.1023/A:1022604118886     Document Type: Article

References (33)

1. Chen, R.H. and Likharev, K.K., Multiple-Junction Single-Electron Transistors for Digital Applications, Appl. Phys. Lett., 1998, vol. 72, pp. 61-63.
2. Wasshuber, C. and Kosina, H., A Single-Electron Device and Circuit Simulator, Superlattices Microstruct., 1997, vol. 21, no. 1, pp. 37-42.
3. Klimeck, G., Lake, R., Bowen, R.C., Frensley, W.R., and Moise, T.S., Quantum Device Simulation with a Generalized Tunneling Formula, Appl. Phys. Lett., 1995, vol. 67, pp. 2539-2541.
4. Lake, R., Klimeck, G., Bowen, R.C., and Jovanovic, D., Single and Multiband Modeling of Quantum Electron Transport through Layered Semiconductor Devices, J. Appl. Phys., 1997, vol. 81, pp. 7845-7869.
5. Abramov, I.I. and Kharitonov, V.V., Analysis of Multidimensional- Simulation Software for Silicon VLSI and ULSI Components, Elektron. Tekh., Ser. 3: Mikroelektron., 1992, issue 1, pp. 28-32.
6. Sun, J.P., Haddad, G.I., Mazumder, P., and Schulman, J.N., Resonant Tunneling Diodes: Models and Properties, Proc. IEEE, 1998, vol. 86, pp. 641-661.
7. Abramov, I.I. and Novik, E.G., Chislennoe modelirovanie metallicheskikh odnoelektronnykh tranzistorov (Numerical Simulation of Metal-Compound Single-Electron Transistors), Minsk: Bestprint, 2000.
8. Abramov, I.I., Goncharenko, I.A., Novik, E.G., and Sheremet, I.V., Simulation Software System for Single-Electron and Resonant-Tunneling Nanoelectronic Devices, Materialy 6-oi Mezhdunarodnoi Krymskoi konferentsii "SVCh-tekhnika i telekommunikatsionnye tekhnologii", KryMiKo '96 (Materials of the 6th Int. Crimean Conf. on Microwave and Telecommunication Technologies, CriMiCo'96), Sebastopol, 1996, pp. 294-298.
9. Abramov, I.I., Modelirovanie fizicheskikh protsessov v elementakh kremnievykh integral'nykh mikroskhem (Modeling Physical Processes in Silicon-IC Components), Minsk: BGU, 1999.
10. Abramov, I.I. and Novik, E.G., Classification of Single-Electron Devices, Fiz. Tekh. Poluprovodn. (St. Petersburg), 1999, vol. 33, issue 11, pp. 1388-1394.
11. Single Charge Tunneling: Coulomb Blockade Phenomena in Nanostructures, Grabert, H. and Devoret, M.H., Eds., NATO ASI Ser., Ser. B, vol. 294, New York: Plenum, 1992.
12. Abramov, I.I., Goncharenko, I.A., and Novik, E.G., On the Operating Temperature of Single-Electron Transistors, Pis'ma Zh. Tekh. Fiz., 1998, vol. 24, issue 8, pp. 16-19.
13. Abramov, I.I. and Novik, E.G., A Two-Dimensional Numerical Model of the Single-Electron Transistor, Mikroelektronika, 2000, vol. 29, no. 3, pp. 197-201.
14. Abramov, I.I. and Novik, E.G., Modeling the Single-Electron Transistor by Numerical Solution of Poisson's Equation, Pis'ma Zh. Tekh. Fiz., 2000, vol. 26, issue 16, pp. 63-67.
15. Abramov, I.I. and Novik, E.G., Characteristics of Single-Electron Transistors Based on Different Metal Compounds, Fiz. Tekh. Poluprovodn. (St. Petersburg), 2000, vol. 34, issue 8, pp. 1014-1019.
16. Abramov, I.I., Goncharenko, I.A., and Novik, E.G., Computer Simulation of Single-Electron Transistors, Izv. Vyssh. Uchebn. Zaved., Elektron., 2000, no. 2, pp. 87-94.
17. Abramov, I.I., Novik, E.G., and Ignatenko, S.A., Single-Electron Devices Based on Three Cascaded Tunnel Junctions: The Calculation of Current-Voltage Characteristics, Materialy dokladov Mezhdunarodnoi nauchnotekhnicheskoi konferentsii "Novye tekhnologii izgotovleniya mnogokristal'nykh modulei" (Proc. Int. Conf. on New Manufacture Technologies for Multichip Modules), Minsk, 2000, pp. 112-114.
18. Abramov, I.I. and Novik, E.G., Background-Charge Approximations for Single-Electron-Transistor Modeling, Fiz. Tekh. Poluprovodn. (St. Petersburg), 2001, vol. 35, issue 4, pp. 489-491.
19. Abramov, I.I., Berashevich, Yu.A., Sheremet, I.V., and Yakubovskii, I.A., Simulation Software System for Resonant-Tunneling Structures, Izv. Vyssh. Uchebn. Zaved., Radioelektron., 1999, vol. 42, no. 2, pp. 46-50.
20. Abramov, I.I., Goncharenko, I.A., Danilyuk, A.L., and Korolev, A. V., Simulation of Resonant-Tunneling Structures with the RTS-NANODEV Software System, Materialy 9-oi Mezhdunarodnoi Krymskoi mikrovolnovoi konferentsii "SVCh-tekhnika i telekommunikatsionnye tekhnologii", KryMiKo'99 (Materials of the 9th Int. Crimean Conf. on Microwave and Telecommunication Technologies, CriMiCo'99), Sebastopol, 1999, pp. 296-299.
21. Goncharenko, I.A., Method and Software for the Calculation of the Transmission Coefficient for a Double-Barrier Resonant-Tunneling Structure, Vesn. Suvyazi, 1999, no. 1, pp. 138-140.
22. Abramov, I.I. and Goncharenko, I.A., Comparative Study of a Numerical and an Analytical Model of Resonant-Tunneling Structures, Izv. Belarus. Inzh. Akad., 1999, nos. 1(7)-2, pp. 116-118.
23. Abramov, I.I. and Goncharenko, I.A., Methods for the Approximation of Exterior-Boundary Conditions in the Modeling of Resonant-Tunneling Structures, Izv. Belarus. Inzh. Akad., 2000, nos. 1(9)-2, pp. 88-90.
24. Abramov, I.I. and Goncharenko, I.A., Combined 1D Model of the Resonant-Tunneling Diode, Materialy 11-oi Mezhdunarodnoi konferentsii "SVCh-tekhnika i telekommunikatsionnye tekhnologii", KryMiKo'2001 (Materials of the 11th Int. Conf. on Microwave and Telecommunication Technologies, CriMiCo'2001), Sebastopol, 2001, pp. 443-444.
25. Abramov, I.I., Danilyuk, A.L., and Korolev, A.V., Nonlinear Electrical Model of the Resonant-Tunneling Diode, Izv. Vyssh. Uchebn. Zaved., Radioelektron., 2000, vol. 43, no. 3, pp. 59-63.
26. Abramov, I.I., Danilyuk, A.L., and Korolev, A.V., Steady-State and Transient Characteristics of the Resonant-Tunneling Diode Represented in Terms of a Nonlinear Electrical Model, Vestsi NAN Belarusi, Ser. Fiz.-Tekh. Navuk, 2000, no. 2, pp. 75-79.
27. Abramov, I.I., Danilyuk, A.L., and Korolev, A.V., Universal Electrical Model of Double-Barrier Structures, Vestsi NAN Belarusi, Ser. Fiz.-Tekh. Navuk, 2001, no. 1, pp. 78-81.
28. Abramov, I.I. and Korolev, A.V., Theoretical Study of Active Structures Containing Resonant-Tunneling Diodes, Zh. Tekh. Fiz., 2001, vol. 71, issue 9, pp. 128-133.
29. Abramov, I.I. and Rogachev, A.I., Frequency Characteristics of T-interference Transistors Differing in Semiconductor Material, Materialy 10-oi Mezhdunarodnoi Krymskoi mikrovolnovoi konferentsii "SVCh-tekhnika i telekommunikatsionnye tekhnologii", KryMiKo'2000 (Materials of the 10th Int. Crimean Conf. on Microwave and Telecommunication Technologies, CriMiCo'2000), Sebastopol, 2000, pp. 421-422.
30. Abramov, I.I. and Rogachev, A.I., Electrical Characteristics of Single-Gate Quantum-Interference Transistors Differing in Semiconductor Material, Fiz. Tekh. Poluprovodn. (St. Petersburg), 2001, vol. 35, issue 11, pp. 1365-1369.
31. Abramov, I.I. and Rogachev, A.I., Wigner-Function Model of a Ballistic-Transport T-interference Transistor, Izv. Belarus. Inzh. Akad., 2001, no. 1(11)/3, pp. 74-76.
32. Miller, T.G. and Reifenberger, R., Three-Tunnel-Capacitor Model for Single-Electron Tunneling in Layered Thin Films, Phys. Rev. B, 1994, vol. 50, pp. 3342-3349.
33. Abramov, I.I., Berashevich, Yu.A., and Danilyuk, A.L., Electric-Potential Characteristics of Quantum-Interference Transistors Differing in Semiconductor Material, Zh. Tekh. Fiz., 1999, vol. 69, issue 11, pp. 130-131.