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Volumn 4, Issue , 2004, Pages 143-146
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Growth mechanism of epitaxial NiSi2 layer in the Ni/Ti/Si(001) contact for atomically flat interfaces
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Author keywords
[No Author keywords available]
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Indexed keywords
ANNEALING;
COALESCENCE;
CRYSTAL ORIENTATION;
INTERFACES (MATERIALS);
QUARTZ;
TRANSMISSION ELECTRON MICROSCOPY;
X RAY DIFFRACTION ANALYSIS;
FACET FORMATIONS;
QUARTZ OSCILLATORS;
SHEET RESISTANCES;
SURFACE OXIDES;
NICKEL COMPOUNDS;
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EID: 3543085768
PISSN: None
EISSN: None
Source Type: Book
DOI: None Document Type: Conference Paper |
Times cited : (3)
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References (6)
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