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Volumn 4, Issue , 2004, Pages 143-146

Growth mechanism of epitaxial NiSi2 layer in the Ni/Ti/Si(001) contact for atomically flat interfaces

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; COALESCENCE; CRYSTAL ORIENTATION; INTERFACES (MATERIALS); QUARTZ; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

EID: 3543085768     PISSN: None     EISSN: None     Source Type: Book    
DOI: None     Document Type: Conference Paper
Times cited : (3)

References (6)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.