Passi4: The next technology for passive integration on silicon

Proceedings - Electronic Components and Technology Conference

Volumn , Issue , 2007, Pages 968-973

  Den Dekker, A ^a   Van Geelen, A ^a   Van Der Wel, P ^a   Koster, R ^a   Rodenburg, E C ^b  

^a NXP SEMICONDUCTORS   (Netherlands)

^b PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; ELECTRIC COILS; FINITE ELEMENT METHOD; GLOBAL SYSTEM FOR MOBILE COMMUNICATIONS; OPTIMIZATION; RESISTORS; SURFACE MOUNT TECHNOLOGY; WAFER BONDING;

HIGH DENSITY CAPACITORS; LOW DENSITY CAPACITORS; PASSIVE INTEGRATION;

SILICON;

EID: 35348874767     PISSN: 05695503     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ECTC.2007.373914     Document Type: Conference Paper

References (5)

1. Joost T.M. van Beek et al, "High-Q integrated RF passives and RF-MEMS on silicon.", Proc. ESSDERC 2003
2. P. van der Wel, "RF characterisation and process control for passive integration components", to be published, ECTC 2007
3. E.C. Rodenburg et al, "Silicon based SiP with crude through wafer vias", IMAPS 2006
4. A.J.M. de Graauw et al, "Miniaturized Quad-Band Front-End Module for GSM using Si BiCMOS and passive integration technologies", BCTM 2006
5. F. Roozeboom et al, "High density, Low-Loss MOS Capacitors for integrated RF Decoupling", Int. J. Microcircuits and Electronic Packaging, 24 (3), 182-196, 2001