RF characterisation and process control for passive integration components

Proceedings - Electronic Components and Technology Conference

Volumn , Issue , 2007, Pages 1855-1860

  Van Der Wel, P J ^a   Dijkhuis, J F ^a   Chanlo, C ^a   Ten Dolle, H K J ^a   Van Den Oever, L C M ^a   Havens, R J ^a  

^a NXP SEMICONDUCTORS   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; IMPACT TESTING; INTEGRATION; MIM DEVICES; OHMIC CONTACTS; POWER AMPLIFIERS;

DECOUPLING CAPACITOR; STACKED POWER AMPLIFIER; THROUGH WAFER INTERCONNECT (TWI);

PROCESS CONTROL;

EID: 35348814880     PISSN: 05695503     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ECTC.2007.374050     Document Type: Conference Paper

References (8)

1. J.T.M. van Beek et al, "High-Q integrated RF passives and RF-MEMS on silicon", MRS Symp. Proc. Vol 783, pp. B3.1.1-B3.1.12.
2. A. den Dekker et al, "Passi4: The Next Technology for Passive Integration on Silicon", to be published at ECTC 2007.
3. E.C. Rodenburg et al, "Silicon based SiP with crude through wafer vias", Proc. IMAPS 2006 Gothenburg.
4. A.J.M. de Graauw et al, "Miniaturized Quad-Band Front-End Module for GSM using Si BiCMOS and passive integration technologies", Conf. Proc. BCTM 2006, Maastricht.
5. Maury Application Note: "Theory of Load and Source Pull Measurement", http://www.maurymw.com/support/pdfs/5C-041.pdf
6. Agilent Application Note 154: "S-Parameter Design" http://cp.literature.agilent.com/litweb/pdf/59521087.pdf
7. G.D. Vendelin et al., "Microwave Circuit Design using Linear and Nonlinear Techniques", John Wiley & Sons Inc. 1990, page 16.
8. see: http://www.sonnetusa.com/