Green emission from InP-GaP quantum-dot light-emitting diodes

IEEE Photonics Technology Letters

Volumn 18, Issue 7, 2006, Pages 895-897

  Hatami, F ^a   Masselink, W T ^a   Lordi, V ^b   Harris Jr , J S ^b  

^a HUMBOLDT UNIVERSITY   (Germany)

^b Stanford University   (United States)

Author keywords

Electroluminescence (EL); Light emitting diodes (LEDs); Quantum dot (QD) system devices

Indexed keywords

ACTIVE REGIONS; BAND GAPS; DRIVE CURRENTS; EMISSION PEAKS; EMITTED LIGHT; GREEN EMISSIONS; INP; LOW CURRENTS; MATRIX; QUANTUM DOTS; QUANTUM WELL; QUANTUM-DOT (QD) SYSTEM DEVICES; RED ELECTROLUMINESCENCE; SELF-ASSEMBLED; WETTING LAYER;

DIODES; ELECTROLUMINESCENCE; GALLIUM ALLOYS; GALLIUM PHOSPHIDE; INDIUM PHOSPHIDE; LIGHT; LIGHT EMISSION; SEMICONDUCTOR QUANTUM DOTS;

LIGHT EMITTING DIODES;

EID: 35348839684     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2006.872288     Document Type: Article

References (11)

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