메뉴 건너뛰기




Volumn 82, Issue 2 SPEC. ISS., 2007, Pages 178-181

Determination of relative sputtering yield of Cr/Si

Author keywords

AES depth profiling; Sputtering yield

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; COMPUTER SIMULATION; RELIABILITY THEORY; SPUTTERING;

EID: 35248845539     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.vacuum.2007.07.017     Document Type: Article
Times cited : (11)

References (13)
  • 6
    • 0003127712 scopus 로고
    • Sputtering by ion bombardment: theoretical concepts
    • Behrish R. (Ed), Springer, Berlin
    • Sigmund P. Sputtering by ion bombardment: theoretical concepts. In: Behrish R. (Ed). Sputtering by particle bombardment Vol. 1 (1981), Springer, Berlin
    • (1981) Sputtering by particle bombardment , vol.1
    • Sigmund, P.1
  • 7
    • 35248819409 scopus 로고    scopus 로고
    • Chen et al. US Patent No. US 6,939,764 B2 (2005) 4.
  • 8
    • 35248876841 scopus 로고    scopus 로고
    • 〈http://www.srim.org〉.
  • 9
    • 0000831910 scopus 로고    scopus 로고
    • Sample preparation techniques for TEM
    • Amelickx S., Van Dyck D., and van Tendeloo J. (Eds), VCH Verlaggesellschaft mbH, Weinheim, Germany [Applications, II. Special Topics, chapter 3]
    • Barna A., Radnoczi G., and Pecz B. Sample preparation techniques for TEM. In: Amelickx S., Van Dyck D., and van Tendeloo J. (Eds). Handbook for microscopy vol. 3 (1997), VCH Verlaggesellschaft mbH, Weinheim, Germany 751-801 [Applications, II. Special Topics, chapter 3]
    • (1997) Handbook for microscopy , vol.3 , pp. 751-801
    • Barna, A.1    Radnoczi, G.2    Pecz, B.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.