The influence of interfaces and the modulation doping technique on the magneto-transport properties of HgTe based quantum wells

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 4, Issue 9, 2007, Pages 3382-3389

  Becker, C R ^a   Brune C ^a   Schafer M ^a   Roth, A ^a   Buhmann, H ^a   Molenkamp, L W ^a  

^a UNIVERSITY OF WÜRZBURG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

2-DIMENSIONAL ELECTRON GAS (2DEG); CHEMICAL ETCHING; HALL BAR PHOTOLITHOGRAPHY;

DOPING (ADDITIVES); ELECTRON GAS; ETCHING; GALVANOMAGNETIC EFFECTS; INTERFACES (MATERIALS); PHOTOLITHOGRAPHY; SEMICONDUCTOR QUANTUM WELLS;

MERCURY COMPOUNDS;

EID: 35248818830     PISSN: 18626351     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssc.200775402     Document Type: Article

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