Sub k1 = 0.25 lithography with double patterning technique for 45nm technology node flash memory devices at λ = 193nm

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6520, Issue PART 2, 2007, Pages

  Capetti, Gianfranco ^a   Cantù, Pietro ^a   Galassini, Elisa ^a   Prêt, Alessandro Vaglio ^a   Turco, Catia ^a   Vaccaro, Alessandro ^a   Rigolli, Pierluigi ^a   D'Angelo, Fabrizio ^a   Cotti, Gina ^a  

^a STMICROELECTRONICS   (Italy)

Author keywords

ArF; Double exposure; Hard mask; K1; OPC

Indexed keywords

BIREFRINGENCE; DATA STORAGE EQUIPMENT; IMAGING SYSTEMS; OPTIMIZATION; PATTERN RECOGNITION;

DOUBLE EXPOSURE; HARD MASKS; HIGH DENSITY MEMORY DEVICES;

PHOTORESISTS;

EID: 35148895056     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.711976     Document Type: Conference Paper

References (7)

1. C. Lim et al. : Positive and Negative Tone Double Patterning Lithography for 50nm Flash Memory. Proceedings of SPIE, February 2006.
2. C. Noelscher et al. : Double line shrink lithography at k 1= 0.16, Microelectronic Engineering 4864, February 2006.
3. W.Y. Jung et al.: Patterning with spacer for expanding the resolution limit of current lithography tool, Proceedings of SPIE, February 2006.
4. rd symposium on immersion lithography, October 2006.
5. T. Ebihara et al.: Beyond k1=0.25 lithography: 70nm L/S patterning using KrF scanners. Proceedings of SPIE Vol. 5256 23rd Annual BACUS Symposium on Photomask Technology, 2003.
6. M. Maenhoudt et al.: Double Patterning scheme for sub-0.25 k1 single damascene structures at NA=0.75, λ=193nm. Proceedings of SPIE Vol. 5754, 2005.
7. B. Schulz et al.: In'chip Overlay Metrology in 90nm production. International Symposium on Semiconductor Manufacturing (ISSM), 2005.