Spin-on organic hardmask materials in 70nm devices

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6519, Issue PART 2, 2007, Pages

  Oh, Chang Il ^a   Uh, Dong Seon ^a   Kim, Do Hyeon ^a   Lee, Jin Kuk ^a   Yun, Hui Chan ^a   Nam, Irina ^a   Kim, Min Soo ^a   Yoon, Kyong Ho ^a   Hyung, Kyung Hee ^a   Tokareva, Nataliya ^a   Cheon, Hwan Sung ^a   Kim, Jong Seob ^a   Chang, Tu Won ^a  

^a Cheil Industries Inc   (South Korea)

Author keywords

Amorphous carbon layer (ACL); ArF lithography; Etch selectivity; Spin on organic hardmask; Tri layer resist process (TLR)

Indexed keywords

AMORPHOUS FILMS; DATA STORAGE EQUIPMENT; ETCHING; NANOTECHNOLOGY; PHOTORESISTORS;

AMORPHOUS CARBON LAYER (ACL); ARF LITHOGRAPHY; ETCH SELECTIVITY; SPIN ON ORGANIC HARDMASK; TRI-LAYER RESIST PROCESS (TLR);

MASKS;

EID: 35148889878     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.711720     Document Type: Conference Paper

References (3)

1. Jim D. Meador et al., "New Materials for 193-nm Trilayer Imaging," Proc. SPIE, 5376, pp. 1138-1148, 2004.
2. Jung Hwan Hah et al., "Spin-on Hard Mask with Dual BARC Property for 50 nm Devices," Proc. SPIE, 6153, 61530L, 2006.
3. Xie Shao et al., "Recent Progress in Organic Bottom Anti-reflective Coatings," Journal of Photopolymer Science and Technology, 14, pp. 481-488, 2001.