Development of a novel planar-construction avalanche photodiode

IEEE Transactions on Nuclear Science

Volumn 48, Issue 4 I, 2001, Pages 1211-1214

  Gramsch, Ernesto ^a,b   Avila, R E ^c   Ferrer, J ^b  

^a IEEE   (Chile)

^b UNIVERSIDAD DE SANTIAGO DE CHILE   (Chile)

^c División de Investigación y Aplicaciones Nucleares   (Chile)

Author keywords

Avalanche photodiode; Gain; Photodetector

Indexed keywords

AVALANCHE PHOTODIODES; DARK CURRENT; ENERGY RESOLUTION; SURFACE BREAKDOWN; THALLIUM DOPED CESIUM IODIDE;

AVALANCHE DIODES; BORON; CESIUM COMPOUNDS; DIFFUSION IN SOLIDS; ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC CURRENTS; GAIN MEASUREMENT; PHOSPHORS; POISSON EQUATION; SEMICONDUCTOR DEVICE MANUFACTURE;

PHOTODIODES;

EID: 0035428735     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.958752     Document Type: Conference Paper

References (10)

1. A new ionizing radiation detection concept which employs semiconductor avalanche amplification and the tunnel diode element
2. Large area silicon avalanche photodiodes: Photomultiplier tube alternate
3. Phosphorous doping of silicon by means of neutron irradiation
4. Performance of a large area avalanche photodiode
5. High resolution, low energy avalanche photodiode X-ray detectors
6. APD arrays and large-area APD's via a new planar process
7. Noise characteristics of avalanche photodiode arrays of the bevel-edge type
8. Multiplication noise in uniform avalanche diodes