Study of porous silicon fabricated by pulsed anodic etching of n-Si(100)

IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE

Volumn , Issue , 2006, Pages 680-684

  Ali, N K ^a   Hashim, M R ^a   Aziz, A Abdul ^a  

^a SCHOOL OF PHYSICS   (Malaysia)

Author keywords

[No Author keywords available]

Indexed keywords

ETCHING; IMAGE ANALYSIS; RAMAN SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; SURFACE MORPHOLOGY; TIME DELAY;

ANODIZATION; PHONON CONFINEMENT MODEL; PULSED ANODIC ETCHING; PULSED CURRENT;

POROUS SILICON;

EID: 35148880342     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SMELEC.2006.380721     Document Type: Conference Paper

References (16)

1. S. Chan, P. M. Fauchet, "Silicon microcavity light emitting devices", Optical Materials, vol. 17, pp. 31-40 (2001).
2. A. M. Rossi, H. G. Bohn, "Photodetectors from porous silicon", Physica status solidi (a), vol. 202, no 8, pp. 1644-1647 (2005).
3. F. Rahimi, A. Iraj zad and F. Razi, "Characterization of porous poly-silicon impregnated with Pd as a hydrogen sensor", J. Phys. D: Appl. Phys. vol. 38, pp.36-40 (2005).
4. J. Carstensen, M. Christophersen, G. Hasse, and H. Foll, "Parameter dependence of pore formation in silicon within a model of local current bursts", Phys. Stat. Sol. (a), vol. 182, no. 1, pp. 63-68 (2000).
5. P. Claudia, S. Morta, S. Michael J., C. Frederique, and M. Gordon, "Biosensing using porous silicon doble-layer inter-ferometers", J. Am. Chem. Soc. vol. 127, pp. 11636-11645 (2005).
6. L. Pavesi and R. Guardini, "Porous silicon: Silicon quantum dots for photonic applications", Brazilian Journal of Physics, vol. 26, no. 1, pp. 151-161 (1996).
7. X. Hou, H. Fan, L. Xu, F. Zhang, M. Li, M. Yu, and X. Wang, "Pulsed anodic etching: An effictive method of preparing light emitting porous silicon", Appl. Phys. Lett. vol. 68, no 17, pp. 2323-2325 (1996).
8. B. Das, and S. P. McGinnis, "Porous silicon pn junction light emitting diodes", Semicond. Sci. Technol. vol. 14, pp. 988-993 (1999).
9. J. Carstensen, M. Christophersen, G. Hasse, and H. Foll, "Pore formation mechanisms for the Si-HF system", Mat. Sci. Eng. B. vol. 23, pp. 69-74 (2000).
10. I. H. Campbell and P. M. Fauchet, "The effects of microcrystal size and shape on the one phonon Raman spectra of crystalline semiconductors", Solid State Commu-nications. vol. 58, no. 10, pp. 739-741 (1986).
11. Z. Sui, P. P. Leong, I. P. Herman, and S. Gregg, "Raman analysis of light emitting porous silicon", Appl. Phys. Lett. vol. 60, no. 17, pp. 2086-2088 (1992).
12. M. Yang, D. Huang, P. Hao, F. Zhang, X. Hou, and X. Wang, "Study of the Raman peak shift and the linewidth of light emitting porous silicon", J. Appl. Phys. vol. 75, no. 1, pp. 651-653 (1994).
13. R. Tsu, H. Shen, and M. Dutta, "Correlation of Raman and photoluminescence spectra of porous silicon", Appl. Phys. Lett. vol. 60, no. 1, pp. 112-114 (1992).
14. R. Prabakaran, R. Kesavamoorthy, and A. Singh, "Optical microstructural investi-gations of porous silicon", Bull. Mater. Sci. vol. 28, no. 3, pp. 219-225 (2005).
15. I. M. Young, M. I. J. Beale, and J. D. Benjamin, "X-ray double crystal diffraction study of porous silicon", Appl. Phys. Lett. vol. 46, no. 12, pp. 1133-1135 (1985).
16. H. Richter, Z. P. Wang, and L. Ley, Solid State Commun. vol. 39, pp. 625 (1986).