Preparation of nanogap electrodes of silicon by chemical etching

Molecular Crystals and Liquid Crystals

Volumn 472, Issue 1, 2007, Pages 63/[453]-67/[457]

  Mimura, Kiyoshi ^a   Ara, Masato ^a   Tada, Hirokazu ^a,b  

^a OSAKA UNIVERSITY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

Anisotropic etching; Nanogap electrodes; Silicon on insulator (SOI)

Indexed keywords

ANISOTROPIC ETCHING; ELECTRIC INSULATORS; FABRICATION; LITHOGRAPHY; SILICON;

ETCHING MASKS; MASK PATTERNS; METAL FILMS; NANOGAP ELECTRODES; SILICON ON INSULATORS (SOI);

ELECTRODES;

EID: 35148869186     PISSN: 15421406     EISSN: 15635287     Source Type: Journal    
DOI: 10.1080/15421400701544943     Document Type: Article

References (8)

1. Morpurgo, A. F. & Marcus, C. M. (1999). Appl. Phys. Lett., 74, 2084.
2. Seidel, H., Csepregi, L., Heuberger, A., & Baumgärtel, H. (1990). J. Electrochem. Soc. 137, 3612.
3. Howell, S. W., Dirk, S. M., Childs, K., Pang, H., Blain, M., Simonson, R. J., Tour, J. M., & Wheeler, D. R. (2005). Nanotechnology, 16, 754.
4. Berg, J., Che, F., Lundgren, P., Enoksson, P., & Bengtsson, S. (2005). Nanotechnology, 16, 2197.
5. Palik, E. D., Faust, J. W. Jr., Gray, H. F., & Greene, R. F. (1982). J. Electrochem. Soc., 129, 2051.
6. Pietsch, G. J., Chabal, Y. J., & Higashi, G. S. (1995). J. Appl. Phys., 78, 1650.
7. Linford, M. R., Fenter, P., Eisenberger, P. M., & Chidsey, C. E. D. (1995). J. Am. Chem. Soc., 117, 3145.
8. Sieval, A. B., Opitz, R., Mass, H. P. A., Schoeman, M. G., Meijer, G., Vergeldt, F. J., Zuihof, H., & Sudhölter, E. F. R. (2000). Langmuir, 16, 10359.