Three-dimensional mask effects and source polarization impact on OPC Model accuracy and process window

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6520, Issue PART 3, 2007, Pages

  Saied, M ^a   Foussadier, F ^b   Belledent, J ^c   Trouiller, Y ^d   Schanen, I ^e   Gardin, C ^a   Urbani, J C ^b   Montgomery, P K ^a   Sundermann, F ^b   Robert, F ^b   Couderc, C ^c   Vautrin, F ^b   Kerrien, G ^b   Planchot, J ^b   Yesilada, E ^a   Martinelli, C ^b   Wilkinson, B ^a   Borjon, A ^c   Le Cam, L ^c   Di Maria, J L ^d   Rody, Y ^c   Morgana, N ^f   Farys, Vincent ^b   more..

^a FREESCALE SEMICONDUCTOR INC   (United States)

^b STMICROELECTRONICS   (France)

^c NXP SEMICONDUCTORS   (France)

^d CEA LETI   (France)

^e IMEP LAHC   (France)

^f NONE

Author keywords

3D mask effects; OPC modeling; Polarization; Process window

Indexed keywords

ALGORITHMS; IMAGING SYSTEMS; LITHOGRAPHY; POLARIZATION; THREE DIMENSIONAL; TOPOLOGY;

3D MASK EFFECTS; MASK STRUCTURE; OPC MODEL; PROCESS WINDOW;

PHOTOMASKS;

EID: 35148867077     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.715120     Document Type: Conference Paper

References (11)

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