Doping profile dependence of the vertical impact ionization MOSFET's (I-MOS) performance

Solid-State Electronics

Volumn 51, Issue 10 SPEC. ISS, 2007, Pages 1405-1411

  Abelein, Ulrich ^a   Assmuth, Andreas ^a   Iskra, Peter ^a   Schindler, Markus ^a   Sulima, Torsten ^a   Eisele, Ignaz ^a  

^a BUNDESWEHR UNIVERSITY MUNICH   (Germany)

Author keywords

I MOS; Impact ionization; kT q; MOSFET; Silicon; Subthreshold slope

Indexed keywords

COMPUTER SIMULATION; DOPING (ADDITIVES); MOSFET DEVICES; SILICON;

I-MOS; SUBTHRESHOLD SLOPE;

IMPACT IONIZATION;

EID: 35148851021     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2007.06.017     Document Type: Article

References (11)

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