Model-based approach for design verification and co-optimization of catastrophic and parametric-related defects due to systematic manufacturing variations

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6521, Issue , 2007, Pages

  Perry, Dan ^a   Nakamoto, Mark ^a   Verghese, Nishath ^b   Hurat, Philippe ^b   Rouse, Rich ^b  

^a QUALCOMM INC   (United States)

^b Clear Shape Technologies   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CO-OPTIMIZATION; MANUFACTURABLE DESIGN; MODEL-BASED HOTSPOT DETECTION; PRINTABILITY CHECKER; SILICON-AWARE PARAMETRIC ANALYSIS;

COMPUTER SIMULATION; CONTOUR MEASUREMENT; DESIGN AIDS; DIFFUSION; ETCHING; FOUNDRIES; OPTIMIZATION; PLANT LAYOUT; SILICON;

LITHOGRAPHY;

EID: 35148843246     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.712471     Document Type: Conference Paper

References (10)

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9. S.B. Chiah, X. Zhou, and K.Y. Lim, "Unified Length-A/Width-Dependent Threshold Voltage Model with Reverse Short-Channel and Inverse Narrow-Width Effects", Nanotech 2003, Vol. 2, Cambridge, MA, 2003, pp. 338-341.
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