Hyper NA polarized imaging of 45nm DRAM

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6520, Issue PART 1, 2007, Pages

  Lim, Chang Moon ^a   Park, Sarohan ^a   Hyun, Yoon Suk ^a   Kim, Jin Soo ^a   Eom, Tae Seung ^a   Park, Jun Taek ^a   Moon, Seung Chan ^a   Kim, Jin Woong ^a  

^a Hynix Semiconductor Inc   (South Korea)

Author keywords

45nm; Hyper NA; Immersion; Polarization

Indexed keywords

BIREFRINGENCE; IMAGING SYSTEMS; LIGHTING; MASKS; POLARIZATION;

HYPER NA IMAGING; POLARIZED ILLUMINATION; POLARIZED IMAGING; PROCESS WINDOW;

DYNAMIC RANDOM ACCESS STORAGE;

EID: 35148829992     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.712442     Document Type: Conference Paper

References (5)

1. B. W. Smith et. al. "Benefiting from polarization - effects on high NA", Proc. SPIE 5377 pp. 68-79 (2004).
2. D. G. Flagello et. al., "Challenges with hyper-NA (NA>1.0) polarized light lithography for sub λ /4 resolution", Proc. SPIE 5754, pp. 53-68 (2005)
3. S. Teuber et. al., "Determination of mask induced polarization effects occurring in hyper NA immersion", Proc. SPIE 5754 pp.543-554 (2005)
4. W. de Boeiji et. al. "Enabling the 45nm node by hyper-NA polarized lithography" proc. SPIE 6154, 61540B(2006)
5. C. Park et. al. "Hyper NA polarized light lithography for 0.29k1 process" proc. SPIE 6154, 61540F(2006)