Study on photo-chemical analysis system (VLES) for EUV lithography

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6519, Issue PART 2, 2007, Pages

  Sekiguchi, A ^a   Kono, Y ^a   Kadoi, M ^a   Minami, Y ^a   Kozawa, T ^b   Tagawa, S ^b   Gustafson, D ^c   Blackborow, P ^c  

^a Jpn   (Japan)

^b OSAKA UNIVERSITY   (Japan)

^c ENERGETIQ TECHNOLOGY INC   (United States)

Author keywords

EUV lithography; Lithography simulation; Open frame exposure; Resist sensitivity

Indexed keywords

LITHOGRAPHY SIMULATION; OPEN FRAME EXPOSURE; PHOTO-CHEMICAL ANALYSIS; RESIST SENSITIVITY;

COMPUTER SIMULATION; LIGHT SOURCES; PHOTOCHEMICAL REACTIONS; PHOTORESISTS; WAVELENGTH;

EXTREME ULTRAVIOLET LITHOGRAPHY;

EID: 35148825588     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.710516     Document Type: Conference Paper

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