Donor binding energy and thermally activated persistent photoconductivity in high mobility (001) AlAs quantum wells

Applied Physics Letters

Volumn 91, Issue 14, 2007, Pages

  Dasgupta, S ^a   Knaak, C ^a   Moser, J ^a   Bichler, M ^a   Roth, S F ^a   Fontcuberta I Morral, A ^a   Abstreiter, G ^a   Grayson, M ^a,b  

^a WALTER SCHOTTKY INSTITUT   (Germany)

^b Northwestern University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DONOR BINDING ENERGY; ELECTRON DENSITY SATURATION; PERSISTENT PHOTOCONDUCTIVITY (PPC); SATURATION DENSITIES;

ALUMINUM ARSENIDE; BINDING ENERGY; CARRIER CONCENTRATION; CHEMICAL ACTIVATION; PHOTOCONDUCTIVITY; SEMICONDUCTOR DOPING;

SEMICONDUCTOR QUANTUM WELLS;

EID: 34948867884     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2794012     Document Type: Article

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